Forming-free resistive switching behaviors in Cr-embedded Ga2O3 thin film memories
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[1] M. Fleischer,et al. Stability of semiconducting gallium oxide thin films , 1990 .
[2] Y. Horikoshi,et al. High resolution X-ray photoelectron spectroscopy of beta gallium oxide films deposited by ultra high vacuum radio frequency magnetron sputtering , 2008 .
[3] C. Hu,et al. Effect of Top Electrode Material on Resistive Switching Properties of $\hbox{ZrO}_{2}$ Film Memory Devices , 2007, IEEE Electron Device Letters.
[4] T. Tseng,et al. Ti-Induced Recovery Phenomenon of Resistive Switching in ZrO2 Thin Films , 2010 .
[5] Chen-Hsi Lin,et al. High Device Yield of Resistive Switching Characteristics in Oxygen-Annealed $\hbox{SrZrO}_{3}$ Memory Devices , 2011, IEEE Transactions on Electron Devices.
[6] Marilena Bartic,et al. Oxygen sensing properties at high temperatures of β-Ga2O3 thin films deposited by the chemical solution deposition method , 2007 .
[7] I. Yoo,et al. Electromigration effect of Ni electrodes on the resistive switching characteristics of NiO thin films , 2007 .
[8] Minghwei Hong,et al. Optical properties of gallium oxide thin films , 2002 .
[9] U-In Chung,et al. Improvement of resistive memory switching in NiO using IrO2 , 2006 .
[10] Sungho Kim,et al. Comprehensive modeling of resistive switching in the Al/TiOx/TiO2/Al heterostructure based on space-charge-limited conduction , 2010 .
[11] Won-Jae Lee,et al. Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition , 2005 .
[12] Chih-Yang Lin,et al. Effect of thermal treatment on resistive switching characteristics in Pt/Ti/Al2O3/Pt devices , 2008 .
[13] Masanori Kawai,et al. Thermally formed conducting filaments in a single-crystalline NiO thin film , 2010 .
[14] A. Rao,et al. Blueshifted Raman scattering and its correlation with the [110] growth direction in gallium oxide nanowires , 2005 .
[15] R E Thurstans,et al. The electroformed metal-insulator-metal structure: a comprehensive model , 2002 .
[16] K. Kinoshita,et al. Bias polarity dependent data retention of resistive random access memory consisting of binary transition metal oxide , 2006 .
[17] S. Yasuda,et al. Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: Homogeneous/inhomogeneous transition of current distribution , 2007, cond-mat/0702564.
[18] M. Janousch,et al. Spatial distribution of oxygen vacancies in Cr-doped SrTiO3 during an electric-field-driven insulator-to-metal transition , 2009 .