III-nitride ultraviolet, blue and green LEDs with SiO 2 photonic crystals fabricated by UV-nanoimprint lithography

[1]  T. Seong,et al.  Use of a patterned current blocking layer to enhance the light output power of InGaN-based light-emitting diodes. , 2017, Optics express.

[2]  Cheul‐Ro Lee,et al.  Influences of graded superlattice on the electrostatic discharge characteristics of green InGaN/GaN light-emitting diodes , 2017 .

[3]  Shui-Jinn Wang,et al.  Enhanced light extraction of GaN-based vertical LEDs with patterned trenches and nanostructures , 2017 .

[4]  Improving the performance of power GaN-based thin-film flip-chip LEDs through a twofold roughened surface , 2016 .

[5]  Zu-Po Yang,et al.  Enhanced external quantum efficiency in GaN-based vertical-type light-emitting diodes by localized surface plasmons , 2016, Scientific Reports.

[6]  Hong Wang,et al.  Performance of InGaN-Based Thin-Film LEDs With Flip-Chip Configuration and Concavely Patterned Surface Fabricated on Electroplating Metallic Substrate , 2016, IEEE Photonics Journal.

[7]  Nelson Tansu,et al.  Resonant cavity effect optimization of III-nitride thin-film flip-chip light-emitting diodes with microsphere arrays. , 2015, Applied optics.

[8]  Zhizhong Chen,et al.  Fabrication and Effects of Ag Nanoparticles Hexagonal Arrays in Green LEDs by Nanoimprint , 2015, IEEE Photonics Technology Letters.

[9]  S. Chou,et al.  Patterning of light-extraction nanostructures on sapphire substrates using nanoimprint and ICP etching with different masking materials , 2015, Nanotechnology.

[10]  Z. Hao,et al.  Enhancement of light output power from LEDs based on monolayer colloidal crystal. , 2014, Small.

[11]  Guofan Jin,et al.  Surface-plasmon-enhanced GaN-LED based on a multilayered M-shaped nano-grating. , 2013, Optics express.

[12]  H. Akiyama,et al.  OPTICAL PROPERTIES AND CARRIER DYNAMICS IN ASYMMETRIC COUPLED InGaN MULTIPLE QUANTUM WELLS , 2013 .

[13]  Low-temperature bonding technique for fabrication of high-power GaN-based blue vertical light-emitting diodes , 2012 .

[14]  Experimental study of light output power for vertical GaN-based light-emitting diodes with various textured surface and thickness of GaN layer , 2012 .

[15]  Heon Lee,et al.  Fabrication of SiNx-based photonic crystals on GaN-based LED devices with patterned sapphire substrate by nanoimprint lithography. , 2012, Optics express.

[16]  Bingshe Xu,et al.  Resonant-cavity blue light-emitting diodes fabricated by two-step substrate transfer technique , 2011 .

[17]  Tae Geun Kim,et al.  Improved Electrical and Optical Properties of Vertical GaN LEDs Using Fluorine-Doped ITO/Al Ohmic Reflectors , 2011, IEEE Journal of Quantum Electronics.

[18]  M. Funato,et al.  Strain relaxation effect by nanotexturing InGaN/GaN multiple quantum well , 2010 .

[19]  Zhitang Song,et al.  Enhanced efficiency of light emitting diodes with a nano-patterned gallium nitride surface realized by soft UV nanoimprint lithography , 2010, Nanotechnology.

[20]  S. C. Wang,et al.  Enhanced light output from a nitride-based power chip of green light-emitting diodes with nano-rough surface using nanoimprint lithography , 2008, Nanotechnology.

[21]  Anisotropy of light extraction from two-dimensional photonic crystal light-emitting diodes , 2007 .

[22]  Shuji Nakamura,et al.  Gallium nitride based microcavity light emitting diodes with 2λ effective cavity thickness , 2007 .

[23]  Joel R. Wendt,et al.  InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures , 2004 .

[24]  K. H. Kim,et al.  III-nitride blue and ultraviolet photonic crystal light emitting diodes , 2004 .

[25]  S. A. Stockman,et al.  Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes , 2003 .