1mA/um-ION strained SiGe45%-IFQW pFETs with raised and embedded S/D

A 2^nd generation of Implant Free Quantum Well pFETs is presented in this work. SiGe^25%-embedded Source/Drain was implemented, leading to an excellent short channel control and logic performance (1mA/um-I<inf>ON</inf>@-1V). No narrow-width effect was found and a multi-VTH strategy is also offered. Performance of the strained-IFQW pFETs was finally demonstrated at lower V<inf>DD</inf>.