Comparison of GaInNAs/GaAs and GaInNAs/GaNAs/GaAs quantum wells emitting over 1.3 μm wavelength

MBE-grown GaInNAs quantum wells (QWs) with and without surrounding GaNAs layers were investigated comparatively. It was demonstrated that introducing GaNAs layers extends efficiently its emission wavelength. However, at a given emission wavelength, the GaNAs intermediate layers do not help to improve the quality of the structure: photoluminescence characteristics are similar for both type of structures, but the GaNAs-containing QW was more sensitive to thermal treatment. Furthermore, the GaNAs-containing QW showed slightly inferior structural quality at the upper interface between compressive GaInNAs and tensile GaNAs layers. In these samples, the photoluminescence blue-shifts are believed to be predominantly determined by interdiffusion phenomena.

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