Measurement of linewidth enhancement factor in self-assembled quantum dot semiconductor lasers emitting at 1310 nm

Measurements of the linewidth enhancement factor (also termed the /spl alpha/-parameter) for quantum dot semiconductor lasers emitting at 1310 nm in both single and multiple transverse modes are presented. Values between 1.5 and 3.0 were measured depending on the device length. In addition, its spectral dependence within the inhomogeneously broadened ground and excited state is investigated.

[1]  J. McInerney,et al.  Minimization of the linewidth enhancement factor in compressively strained semiconductor lasers , 1999, IEEE Photonics Technology Letters.

[2]  D. Bossert,et al.  Gain, refractive index, and /spl alpha/-parameter in InGaAs-GaAs SQW broad-area lasers , 1996, IEEE Photonics Technology Letters.

[3]  A. Stintz,et al.  Gain and linewidth enhancement factor in InAs quantum-dot laser diodes , 1999, IEEE Photonics Technology Letters.

[4]  Guillaume Huyet,et al.  Feedback sensitivity of 1.3 µm InAs/GaAs quantum dot lasers , 2003 .

[5]  L. Coldren,et al.  Diode Lasers and Photonic Integrated Circuits , 1995 .

[6]  Mikhail V. Maximov,et al.  Complete suppression of filamentation and superior beam quality in quantum-dot lasers , 2003 .

[7]  Polarisation-maintaining, harmonically modelocked soliton fibre laser with repetition rate stabilisation using optical pumping of saturable Bragg reflector , 2002 .

[8]  K. Malloy,et al.  High external feedback resistance of laterally loss-coupled distributed feedback quantum dot semiconductor lasers , 2003, IEEE Photonics Technology Letters.

[9]  Sasan Fathpour,et al.  Linewidth enhancement factor and near-field pattern in tunnel injection In0.4Ga0.6As self-assembled quantum dot lasers , 2003 .

[10]  B. Hakki,et al.  Gain spectra in GaAs double−heterostructure injection lasers , 1975 .

[11]  Mikhail V. Maximov,et al.  Low threshold, large To injection laser emission from (InGa)As quantum dots , 1994 .