Measurement of linewidth enhancement factor in self-assembled quantum dot semiconductor lasers emitting at 1310 nm
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John Houlihan | Guillaume Huyet | Brian Corbett | J. Muszalski | B. Corbett | J. Muszalski | G. Huyet | J. Houlihan
[1] J. McInerney,et al. Minimization of the linewidth enhancement factor in compressively strained semiconductor lasers , 1999, IEEE Photonics Technology Letters.
[2] D. Bossert,et al. Gain, refractive index, and /spl alpha/-parameter in InGaAs-GaAs SQW broad-area lasers , 1996, IEEE Photonics Technology Letters.
[3] A. Stintz,et al. Gain and linewidth enhancement factor in InAs quantum-dot laser diodes , 1999, IEEE Photonics Technology Letters.
[4] Guillaume Huyet,et al. Feedback sensitivity of 1.3 µm InAs/GaAs quantum dot lasers , 2003 .
[5] L. Coldren,et al. Diode Lasers and Photonic Integrated Circuits , 1995 .
[6] Mikhail V. Maximov,et al. Complete suppression of filamentation and superior beam quality in quantum-dot lasers , 2003 .
[8] K. Malloy,et al. High external feedback resistance of laterally loss-coupled distributed feedback quantum dot semiconductor lasers , 2003, IEEE Photonics Technology Letters.
[9] Sasan Fathpour,et al. Linewidth enhancement factor and near-field pattern in tunnel injection In0.4Ga0.6As self-assembled quantum dot lasers , 2003 .
[10] B. Hakki,et al. Gain spectra in GaAs double−heterostructure injection lasers , 1975 .
[11] Mikhail V. Maximov,et al. Low threshold, large To injection laser emission from (InGa)As quantum dots , 1994 .