Nanometer-scale imaging of crystal structural information by Fourier Transform Mapping : Technologies supporting semiconductor scientific manufacturing : Process monitoring, testing, failure analysis and reliability

This paper presents a new method for imaging strain and material distribution based on a transmission electron micrograph. This technique, Fourier Transform Mapping, is demonstrated by strain imaging of the Ge/Si system that is a fundamental strained system, strain imaging at a metal/semiconductor interface, and material nanometer-scale analysis of an LSI contact. These demonstrations show the potential for Fourier Transform Mapping to be used as a microanalysis tool for LSI devices.