Development Status of New Material Power Devices
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Atsushi Hiraiwa | Nariaki Ikeda | Koji Yano | Noriyuki Iwamuro | Yasuhiro Uemoto | Akira Bandoh | Yoshinao Miura | Tetsuya Miyazawa | Hiroomi Eguchi | Yoji Shikauchi | Y. Uemoto | A. Hiraiwa | N. Iwamuro | N. Ikeda | T. Miyazawa | Koji Yano | Yoshinao Miura | Y. Miura | H. Eguchi | A. Bandoh | K. Yano | Yoji Shikauchi
[1] Jin Wei,et al. Enhancement-mode GaN double-channel MOS-HEMT with low on-resistance and robust gate recess , 2015, 2015 IEEE International Electron Devices Meeting (IEDM).
[2] Daisuke Ueda,et al. A Drive-by-Microwave isolated gate driver with a high-speed voltage monitoring , 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
[3] Jiangwei Liu,et al. Normally-off HfO2-gated diamond field effect transistors , 2013 .
[4] Daisuke Ueda,et al. GaN transistors on Si for switching and high-frequency applications , 2014 .
[5] Shu Yang,et al. Performance enhancement of normally-off Al2O3/AlN/GaN MOS-Channel-HEMTs with an ALD-grown AlN interfacial layer , 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
[6] Yoshinari Ikeda,et al. All-SiC power module for photovoltaic Power Conditioner System , 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
[7] Hitoshi Umezawa,et al. Diamond Metal–Semiconductor Field-Effect Transistor With Breakdown Voltage Over 1.5 kV , 2014, IEEE Electron Device Letters.
[8] Tsutomu Ina,et al. 1.8 mΩ·cm2 vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation , 2015 .
[9] D. Bour,et al. 1.5-kV and 2.2-m (Omega ) -cm (^{2}) Vertical GaN Transistors on Bulk-GaN Substrates , 2014 .
[10] Toshiharu Makino,et al. Normally-Off Diamond Junction Field-Effect Transistors With Submicrometer Channel , 2016, IEEE Electron Device Letters.
[11] K. Sugiura,et al. 6-in-1 Silicon carbide power module for high performance of power electronics systems , 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
[12] Tsutomu Yatsuo,et al. First experimental demonstration of SiC super-junction (SJ) structure by multi-epitaxial growth method , 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
[13] Satoru Akiyama,et al. Controllability of switching speed and loss for SiC JFET/Si MOSFET cascode with external gate resistor , 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
[14] T. Oka,et al. Vertical GaN-based trench metal oxide semiconductor field-effect transistors on a free-standing GaN substrate with blocking voltage of 1.6 kV , 2014 .
[15] I. Kallfass,et al. Quasi-normally-off GaN gate driver for high slew-rate d-mode GaN-on-Si HEMTs , 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
[16] Pierre Muret,et al. Zr/oxidized diamond interface for high power Schottky diodes , 2014 .
[17] K. Takao,et al. Device Performance and Switching Characteristics of 16 kV Ultrahigh-Voltage SiC Flip-Type n-Channel IE-IGBTs , 2015 .
[18] Carl-Mikael Zetterling,et al. Conductivity modulated on-axis 4H-SiC 10+ kV PiN diodes , 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
[19] Keiko Ariyoshi,et al. Self-Aligned Formation of the Trench Bottom Shielding Region in 4H-SiC UMOSFETs , 2015 .
[20] A. Huang,et al. 22 kV SiC Emitter turn-off (ETO) thyristor and its dynamic performance including SOA , 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
[21] Hiroshi Kawarada,et al. Blocking characteristics of diamond junctions with a punch-through design , 2015 .
[22] T. Ueda,et al. A compact GaN-based DC-DC converter IC with high-speed gate drivers enabling high efficiencies , 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
[23] Siddarth Sundaresan,et al. Static and switching characteristics of 1200 V SiC Junction Transistors with on-chip integrated Schottky rectifiers , 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
[24] Carl-Mikael Zetterling,et al. Area- and efficiency-optimized junction termination for a 5.6 kV SiC BJT process with low ON-resistance , 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
[25] T. Fuyuki,et al. Threshold Voltage Instability in 4H-SiC MOSFETs With Phosphorus-Doped and Nitrided Gate Oxides , 2015, IEEE Transactions on Electron Devices.
[26] Lin Cheng,et al. 27 kV, 20 A 4H-SiC n-IGBTs , 2015 .
[27] Akito Kuramata,et al. Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V , 2016, IEEE Electron Device Letters.
[28] Primit Parikh,et al. 600 V JEDEC-qualified highly reliable GaN HEMTs on Si substrates , 2014, 2014 IEEE International Electron Devices Meeting.
[29] Jin Wei,et al. III-Nitride transistors with photonic-ohmic drain for enhanced dynamic performances , 2015, 2015 IEEE International Electron Devices Meeting (IEDM).
[30] H. Kawarada,et al. Diamond MOSFETs using 2D hole gas with 1700V breakdown voltage , 2016, 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
[31] Kenichiro Tanaka,et al. Current-collapse-free operations up to 850 V by GaN-GIT utilizing hole injection from drain , 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).