Word line voltage generation circuit and non-volatile memory device with the same

The present invention, more specifically relates to a semiconductor memory device, to a nonvolatile flash memory device having a word line voltage generating circuit, and it. Enhancement word line voltage generator for generating the step pulse voltage circuit and the non-volatile memory device includes a first circuit coupled to the programming voltage; And a second circuit connected between the first circuit and the voltage distribution is controlled by a program step code; And a third circuit coupled between the distribution voltage and the ground voltage. The first can be set by setting the resistance value of the third circuit portion different from an increment of the program voltage without changing the program step code to a random value. Further, the first circuit and the third circuit unit has a structure that is symmetric, by controlling such that the sustain specific relationship between the resistance value of the first resistance and the third circuit portion of the circuit, without changing the program step code while maintaining the start target program voltage or program voltage to a fixed value may be set a different increment of said program voltage to any value. According to the present invention, the over-program or under-program without problems also increase in the program voltage without changing the program code in the step can be set to any value. Incremental step pulse, the switch set, the word line voltage, the voltage divider