Mid-infrared InAs0.79Sb0.21-based nBn photodetectors with Al0.9Ga0.2As0.1Sb0.9 barrier layers, and comparisons with InAs0.87Sb0.13 p-i-n diodes, both grown on GaAs using interfacial misfit arrays
暂无分享,去创建一个
Sanjay Krishna | Adam Craig | Andrew R. J. Marshall | Zhaobing Tian | Anthony Krier | S. Krishna | A. Marshall | A. Craig | A. Krier | Z. Tian
[1] Elena Plis,et al. Mid-infrared InAs/GaSb strained layer superlattice detectors with nBn design grown on a GaAs substrate , 2010 .
[2] Anthony Krier,et al. A room temperature photovoltaic detector for the mid-infrared (1.8-3.4 m) wavelength region , 1998 .
[3] Elena Plis,et al. nBn detectors based on InAs∕GaSb type-II strain layer superlattice , 2008 .
[4] Elena Plis,et al. Lateral diffusion of minority carriers in InAsSb-based nBn detectors , 2011, OPTO.
[5] Laurent Cerutti,et al. GaSb-based, 2.2 μm type-I laser fabricated on GaAs substrate operating continuous wave at room temperature , 2009 .
[6] Diana L. Huffaker,et al. GaSb quantum-well-based “buffer-free” vertical light emitting diode monolithically embedded within a GaAs cavity incorporating interfacial misfit arrays , 2006 .
[7] R. People,et al. Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures , 1985 .
[8] D. Huffaker,et al. Interfacial misfit array formation for GaSb growth on GaAs , 2009 .
[9] A. Rogalski,et al. Near room-temperature InAsSb photodiodes: Theoretical predictions and experimental data , 1996 .
[10] G. Wicks,et al. nBn detector, an infrared detector with reduced dark current and higher operating temperature , 2006 .
[11] Jeremy Copley,et al. A low-noise laser-gated imaging system for long-range target identification , 2004, SPIE Defense + Commercial Sensing.
[12] M P C M Krijn,et al. Heterojunction band offsets and effective masses in III-V quaternary alloys , 1991 .
[13] Diana L. Huffaker,et al. Strain relief by periodic misfit arrays for low defect density GaSb on GaAs , 2006 .
[14] H. S. Kim,et al. nBn structure based on InAs /GaSb type-II strained layer superlattices , 2007 .
[15] K. Kohler,et al. Quantum Cascade Detectors , 2009, IEEE Journal of Quantum Electronics.
[16] Short-Wave Infrared GaInAsSb Photodiodes Grown on GaAs Substrate by Interfacial Misfit Array Technique , 2012, IEEE Photonics Technology Letters.
[17] J. B. Rodriguez,et al. Mid-IR focal plane array based on type-II InAs /GaSb strain layer superlattice detector with nBn design , 2008 .