Modulator driver and photoreceiver for 20 Gb/s optic-fiber links

Two integrated circuits, a modulator driver and a photoreceiver integrating a metal-semiconductor-metal (MSM) photodetector, a differential transimpedance amplifier and two limiting amplifier stages for high-speed optical-fiber links are presented. The IC's were manufactured in a 0.2 /spl mu/m gate-length AlGaAs-GaAs high-electron mobility transistor (HEMT) technology with a f/sub T/ of 60 GHz. The modulator driver IC operates up to 25 Gb/s with an output voltage swing of 3.3 V/sub p-p/ at each output. The 1.3-1.55 /spl mu/m wavelength monolithically integrated photoreceiver optoelectronic integrated circuit (OEIC) has a bandwidth of 17 GHz with a high transimpedance gain of 12 k/spl Omega/. Eye diagrams are demonstrated at 20 Gb/s with an output voltage of 1 V/sub p.p/.

[1]  R. Takeyari,et al.  InP/InGaAs HBT ICs for 40 Gbit/s optical transmission systems , 1997, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997.

[2]  A. Leven,et al.  Long wavelength MSM-HEMT and PIN-HEMT photoreceivers grown on GaAs , 1997, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997.

[3]  H. Rein,et al.  Design and realization of low-noise, high-gain Si-bipolar transimpedance preamplifiers for 10 Gb/s optical-fiber links , 1994, Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting.

[4]  Etsuji Omura,et al.  Long-Wavelength Receiver Optoelectronic Integrated Circuit on 3-Inch-Diameter GaAs Substrate Grown by InP-on-GaAs Heteroepitaxy , 1994 .

[5]  T. F. Meister,et al.  20 Gbit/s transimpedance preamplifier and modulator driver in SiGe bipolar technology , 1997 .

[6]  A. Thiede,et al.  High power modulator driver ICs up to 30 Gb/s with AlGaAs/GaAs HEMTs , 1997, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997.