论文信息 - High electric field photocurrent of Vidicon and diode devices using wide band gap a-Si:H prepared with intentional control of silicon network by chemical annealing - 字舞流文

High electric field photocurrent of Vidicon and diode devices using wide band gap a-Si:H prepared with intentional control of silicon network by chemical annealing

T. Kamiya | T. Sugawara | W. Futako | I. Shimizu

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