Interactions between confined fields and carriers at interfaces between two-dimensional materials and nanoscale metal architectures

Compact structure-function simulations are needed to examine interactions between confined fields and carriers at interfaces of two-dimensional materials and metal contacts. This work used electron-source discrete dipole simulations of fields confined at metals interfaced with van der Waals materials to compare with measures using scanning transmission electron microscopy (STEM) for energy electron loss spectroscopy (EELS). Bright, dark, and hybrid modes at the interface were mapped at sub-nanometer resolution at resonant energies. Comparing simulation and measurement provided direct, femtosecond measures of confined field dephasing into carriers on topologically insulated surfaces for the first time.

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