An ultralow-power memory-based big-data computing platform by nonvolatile domain-wall nanowire devices

As one recently introduced non-volatile memory (NVM) device, domain-wall nanowire (or race-track) has shown potential for main memory storage but also computing capability. In this paper, the domain-wall nanowire is studied for a memory-based computing platform towards ultra-low-power big-data processing. One domain-wall nanowire based logic-in-memory architecture is proposed for big-data processing, where the domain-wall nanowire memory is deployed as main memory for data storage as well as XOR-logic for comparison and addition operations. The domain-wall nanowire based logic-in-memory circuits are evaluated by SPICE-level verifications. Further evaluated by applications of general-purpose SPEC2006 benchmark and also web-searching oriented Phoenix benchmark, the proposed computing platform can exhibit a significant power saving on both main memory and ALU under the similar performance when compared to CMOS based designs.

[1]  Mark D. Stiles,et al.  Spin-Transfer Torque and Dynamics , 2006 .

[2]  M. Breitwisch Phase Change Memory , 2008, 2008 International Interconnect Technology Conference.

[3]  William Song,et al.  Negative-resistance read and write schemes for STT-MRAM in 0.13µm CMOS , 2010, 2010 IEEE International Solid-State Circuits Conference - (ISSCC).

[4]  Ilya Krivorotov,et al.  Deep subnanosecond spin torque switching in magnetic tunnel junctions with combined in-plane and perpendicular polarizers , 2011 .

[5]  Jung Ho Ahn,et al.  McPAT: An integrated power, area, and timing modeling framework for multicore and manycore architectures , 2009, 2009 42nd Annual IEEE/ACM International Symposium on Microarchitecture (MICRO).

[6]  Christoforos E. Kozyrakis,et al.  Evaluating MapReduce for Multi-core and Multiprocessor Systems , 2007, 2007 IEEE 13th International Symposium on High Performance Computer Architecture.

[7]  Kuei-Hung Shen,et al.  Racetrack Memory: A high-performance, low-cost, non-volatile memory based on magnetic domain walls , 2011, 2011 International Electron Devices Meeting.

[8]  Hao Yu,et al.  Design exploration of ultra-low power non-volatile memory based on topological insulator , 2012, NANOARCH '12.

[9]  Kaushik Roy,et al.  TapeCache: a high density, energy efficient cache based on domain wall memory , 2012, ISLPED '12.

[10]  Wei Zhang,et al.  Design of low power 3D hybrid memory by non-volatile CBRAM-crossbar with block-level data-retention , 2012, ISLPED '12.

[11]  Yoshihiro Ueda,et al.  A 64Mb MRAM with clamped-reference and adequate-reference schemes , 2010, 2010 IEEE International Solid-State Circuits Conference - (ISSCC).

[12]  Kang L. Wang,et al.  Sub-200 ps spin transfer torque switching in in-plane magnetic tunnel junctions with interface perpendicular anisotropy , 2012 .

[13]  Jimmy J. Lin,et al.  Book Reviews: Data-Intensive Text Processing with MapReduce by Jimmy Lin and Chris Dyer , 2010, CL.

[14]  Jun Yang,et al.  Phase-Change Technology and the Future of Main Memory , 2010, IEEE Micro.

[15]  D. Stewart,et al.  The missing memristor found , 2008, Nature.

[16]  Hao Yu,et al.  Analysis and Modeling of Internal State Variables for Dynamic Effects of Nonvolatile Memory Devices , 2012, IEEE Transactions on Circuits and Systems I: Regular Papers.

[17]  Shunsuke Fukami,et al.  Control of Multiple Magnetic Domain Walls by Current in a Co/Ni Nano-Wire , 2010 .

[18]  Somayeh Sardashti,et al.  The gem5 simulator , 2011, CARN.

[19]  Wei Zhang,et al.  Design Exploration of Hybrid CMOS and Memristor Circuit by New Modified Nodal Analysis , 2012, IEEE Transactions on Very Large Scale Integration (VLSI) Systems.

[20]  S. Parkin,et al.  Magnetic Domain-Wall Racetrack Memory , 2008, Science.

[21]  Ilya Krivorotov,et al.  Low writing energy and sub nanosecond spin torque transfer switching of in-plane magnetic tunnel junction for spin torque transfer random access memory , 2011 .