Ion-beam-induced amorphization and recrystallization in silicon

Ion-beam-induced amorphization in Si has attracted significant interest since the beginning of the use of ion implantation for the fabrication of Si devices. A number of theoretical calculations and experiments were designed to provide a better understanding of the mechanisms behind the crystal-to-amorphous transition in Si. Nowadays, a renewed interest in the modeling of amorphization mechanisms at atomic level has arisen due to the use of preamorphizing implants and high dopant implantation doses for the fabrication of nanometric-scale Si devices. In this paper we will describe the most significant experimental observations related to the ion-beam-induced amorphization in Si and the models that have been developed to describe the process. Amorphous Si formation by ion implantation is the result of a critical balance between the damage generation and its annihilation. Implantation cascades generate different damage configurations going from isolated point defects and point defect clusters in essentially ...

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