论文信息 - Sub-100 nm {\beta}-Ga2O3 MOSFET with 100 GHz fMAX and>100 V breakdown - 字舞流文

Sub-100 nm {\beta}-Ga2O3 MOSFET with 100 GHz fMAX and>100 V breakdown

U. Singisetti | C. Saha | Hongping Zhao | Lingyu Meng | Abhishek Vaidya | A. F. M. Anhar | Uddin Bhuiyan