An analytical delayed-turn-off model for buried-channel PMOS devices operating at 77 K

A closed-formed analytical PMOS delayed-turn-off model suitable for simulation of circuits with buried-channel PMOS devices operating in the delayed-turn-off region at liquid-nitrogen temperature is presented. As verified by low-temperature PISCES results, the closed-form analytical PMOS delayed-turn-off model provides a much better accuracy for simulation of circuits operating at 77 K. >

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