New concept for CMOS-compatible fabrication of uncooled infrared focal plane arrays using wafer-scale device transfer bonding

In this paper we present a new membrane transfer bonding technology for fabrication of uncooled infrared focal plane arrays (IRFPAs). The technology consists only of low temperature processes, thus, it is compatible with standard integrated circuits (ICs). In the future this technology may allow infrared detectors with high temperature annealed, high performance thermistor materials to be integrated in CMOS based uncooled IRFPAs. The infrared detectors and the ICs are processed and optimized on different wafers. The wafer with the detectors (sacrificial detector-wafer) is bonded to the IC wafer (target wafer) using low temperature adhesive bonding. The detector-wafer is sacrificially removed by etching or by a combination of grinding and etching, while the detectors remain on the target wafer. The detectors are mechanically and electrically contacted to the target wafer. Finally, the adhesive bonding material is sacrificially removed. One of the unique advantages of this technology is the ability to integrate small, high temperature annealed detectors and ICs. We have applied membrane transfer bonding to the fabrication of arrays of infrared bolometers with polycrystalline silicon thermistors. In principle, membrane transfer bonding can be applied to the fabrication of any type of free-standing transducer including bolometers, ferroelectric detectors and movable micro-mirrors.

[1]  Scott B. Evans,et al.  High-MTF hybrid ferroelectric IRFPA , 1998, Defense, Security, and Sensing.

[2]  Mitsumasa Koyanagi,et al.  Three-dimensional integration technology for real time micro-vision system , 1997, 1997 Proceedings Second Annual IEEE International Conference on Innovative Systems in Silicon.

[3]  Nigel Robinson,et al.  FOA/DSTO uncooled IRFPA development , 1999, Defense, Security, and Sensing.

[4]  T. Kurokawa,et al.  Novel technology for hybrid integration of photonic and electronic circuits , 1996, IEEE Photonics Technology Letters.

[5]  R. Horowitz,et al.  Batch micropackaging by compression-bonded wafer-wafer transfer , 1999, Technical Digest. IEEE International MEMS 99 Conference. Twelfth IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.99CH36291).

[6]  小柳 光正.  Three-dimensional integration technology for real time micro-vision system , 1997 .

[7]  G. Stemme,et al.  Low temperature full wafer adhesive bonding , 2001 .

[8]  M. Wu,et al.  A substrate-independent wafer transfer technique for surface-micromachined devices , 2000, Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308).

[9]  R. Dekker,et al.  A low-cost substrate transfer technology for fully integrated transceivers , 1998, Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.98CH36198).

[10]  K. Harsh,et al.  Flip-chip assembly for Si-based RF MEMS , 1999, Technical Digest. IEEE International MEMS 99 Conference. Twelfth IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.99CH36291).

[11]  G. Stemme,et al.  Void-free full wafer adhesive bonding , 2000, Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308).

[12]  L. Deferm,et al.  CMOS compatible wafer scale adhesive bonding for circuit transfer , 1997, Proceedings of International Solid State Sensors and Actuators Conference (Transducers '97).

[13]  Kristofer S. J. Pister,et al.  Microrelays for batch transfer integration in RF systems , 2000, Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308).

[14]  Chong H. Ahn,et al.  DEVELOPMENT OF AN IN NOVATIVE FLIP-CHIP BONDING TECHNIQUE USING MICR OMACHINED CONDUCTIVE POLYMER BUMPS , 1998 .

[15]  W. Pamler,et al.  Three dimensional metallization for vertically integrated circuits , 1997, European Workshop Materials for Advanced Metallization,.