A new device using the tunneling process in narrow p-n junctions

Abstract The design, fabrication and electrical characteristics of a new device made of heavily doped silicon or germanuim for use as an active circuit element, are discussed. The device is essentially a single, narrow p-n junction made by alloying techniques, and the d.c. negative resistance in its characteristics arises from a tunneling process across the junction, which makes the device inherently capable of working at very high frequency. The device, which is simple in construction and stable even in high humidity, is promising for low-level, high-speed switching, oscillation and amplification.