Resonant Raman Scattering in Ga1—xInxP Solid Solutions

Resonant Raman scattering is investigated around the fundamental edge E0 in Ga1—xInxP solid solutions. The strong enhancements of the “forbidden” LO-like modes are explained by a Frohlich intraband interaction and lead to replica of the first-order spectra. The non-homogeneous activation of the one-phonon density of states and the unusual sharp enhancements of LA-like modes are interpreted as due to structural disorder effects. Local chalcopyrite arrangements are suggested. Les resonances des spectres Raman des solutions solides Ga1—xInxP sont etudiees au voisinage du gap E0. Les fortes resonances des modes LO interdits s'expliquent par le couplage de Frohlich intrabande et conduisent a des repliques des spectres du premier ordre. L'activation non homogene de la densite d'etat a un phonon et la resonance inhabituelle des modes LA sont interpretees en termes de desordre structural. Des arrangements locaux du type chalcopyrite sont suggeres.

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