论文信息 - 1D electronic properties in temperature-induced c(4×2) to 2×1 transition on the β-SiC(100) surface

1D electronic properties in temperature-induced c(4×2) to 2×1 transition on the β-SiC(100) surface

Abstract We investigate the temperature-induced phase transition on Si-terminated β-silicon carbide (SiC)(100) surface using scanning tunneling microscopy (STM) and spectroscopy, and valence band and core level photoemission spectroscopies using synchrotron radiation. Above 700 K, the 2×1 surface exhibits metallization with a non-Fermi liquid power law shape spectral response near the Fermi level. This suggests a surface having one-dimensional (1D) metallicity related to the Si–Si dimers rows constituting the topmost atomic layer. This behavior can be related to the Luttinger liquid model.

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