Simple analytical model for short-channel MOS devices

A simple analytical model derived from a quasi-two-dimensional analysis with a nonvanishing E-field derivative at the pinchoff point and a continuous output conductance at the transition point for short-channel MOSFETs is presented. This model also covers mobility reduction, carrier velocity saturation, body, channel-length modulation, source-drain series resistance and short-channel effects for an accurate determination of the pinchoff point location without internal numerical iterations as compared to other models. This model can be used to describe the channel-length modulation effects more accurately in circuit simulation with short-channel MOSFETs.

[1]  J.C. Lee,et al.  A model for the electric field in lightly doped drain structures , 1987, IEEE Transactions on Electron Devices.

[2]  H. Sibbert,et al.  Model and performance of hot-electron MOS transistors for VLSI , 1979, IEEE Transactions on Electron Devices.

[3]  J. T. Clemens,et al.  Characterization of the electron mobility in the inverted <100> Si surface , 1979, 1979 International Electron Devices Meeting.

[4]  M. El Nokali,et al.  A pseudo-two-dimensional analysis of short channel MOSFETs , 1988 .

[5]  N. G. Constantine.  Hot electron effects in MOSFET's , 1975 .

[6]  Chenming Hu.  Hot-electron effects in MOSFETs , 1983, 1983 International Electron Devices Meeting.

[7]  C.G. Sodini,et al.  The effect of high fields on MOS device and circuit performance , 1984, IEEE Transactions on Electron Devices.

[8]  S. Morimoto,et al.  Analytical model and characterization of small geometry MOSFET's , 1983, IEEE Transactions on Electron Devices.

[9]  T.Y. Chan,et al.  Dependence of channel electric field on device scaling , 1985, IEEE Electron Device Letters.