Exploring the promising properties of 2D exfoliated black phosphorus for optoelectronic applications under 1.55 μm optical excitation

A great interest has been lately initiated in the optoelectronics field for 2D materials with a tunable bandgap. Being able to choose the bandgap of a material is a huge progress in optoelectronics, since it would permit to overcome the limitation imposed by the graphene lack of energy bandgap, but also the restriction imposed by already used semiconductor whose bandgap are fixed and cannot apply for IR-NIR applications. From DFT simulations predictions, Black Phosphorus (bP) becomes a bidimensional semiconducting material with a direct tunable energy bandgap from 0.3 eV to 2 eV by controlling number of layers. This material also has a picosecond carrier response and exceptional mobilities under external excitation. Hence black phosphorus is a promising 2D material candidate for photoconductive switching under a NIR optical excitation as in telecommunication wavelength range of 1.55 μm. In this paper, material electromagnetic properties analysis is described in a large frequency band from optical to microwave measurements executed on different samples allowing energy bandgap and work function dependency to fabrication techniques, anisotropy and multiscale optoelectronic device realization by switch contact engineering and material passivation or encapsulation. Material implementation in microwave devices opens the route to new broadband electronic functionalities triggered by optics, thanks to light/matter extreme confinement degree. In this paper we present fabrication method of bP based microwave photoconductive switch, with a focus on black phosphorus Raman characterization, and obtained performances.

[1]  D. Kleinman,et al.  Cerenkov Radiation from Femtosecond Optical Pulses in Electro-Optic Media , 1984, Topical Meeting on Ultrafast Phenomena.

[2]  M. Hollis,et al.  Picosecond GaAs-Based Photoconductive Optoelectronic Detectors , 1989, OSA Proceedings on Picosecond Electronics and Optoelectronics.

[3]  Salim Faci,et al.  1.55-$\mu$ m GaNAsSb-Based Photoconductive Switch for Microwave Switching , 2010, IEEE Photonics Technology Letters.

[4]  Xianfan Xu,et al.  Phosphorene: an unexplored 2D semiconductor with a high hole mobility. , 2014, ACS nano.

[5]  Likai Li,et al.  Black phosphorus field-effect transistors. , 2014, Nature nanotechnology.

[6]  Yong-Wei Zhang,et al.  Layer-dependent Band Alignment and Work Function of Few-Layer Phosphorene , 2014, Scientific reports.

[7]  F. Xia,et al.  Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics. , 2014, Nature communications.

[8]  Xianfan Xu,et al.  Phosphorene: an unexplored 2D semiconductor with a high hole mobility. , 2014, ACS nano.

[9]  G. Steele,et al.  Isolation and characterization of few-layer black phosphorus , 2014, 1403.0499.

[10]  Andres Castellanos-Gomez,et al.  Environmental instability of few-layer black phosphorus , 2014, 1410.2608.

[11]  Hyeonsik Cheong,et al.  Anomalous polarization dependence of Raman scattering and crystallographic orientation of black phosphorus. , 2015, Nanoscale.

[12]  S. Koester,et al.  Atomic and electronic structure of exfoliated black phosphorus , 2015 .

[13]  Hsin-Ying Chiu,et al.  Exceptional and Anisotropic Transport Properties of Photocarriers in Black Phosphorus. , 2015, ACS nano.

[14]  Wanglin Lu,et al.  Probing the anisotropic behaviors of black phosphorus by transmission electron microscopy, angular-dependent Raman spectra, and electronic transport measurements , 2015, 1509.05953.

[15]  D. Coker,et al.  Oxygen defects in phosphorene. , 2014, Physical review letters.

[16]  C. Tripon-Canseliet,et al.  Effective photoconductivity of exfoliated black phosphorus for optoelectronic switching under 1.55 μm optical excitation , 2016 .