High-speed widely-tunable >90% quantum-efficiency resonant cavity enhanced p-i-n photodiodes
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E. Ozbay | N. Biyikli | I. Kimukin | O. Aytur | M. Gokkavas | G. Ulu | M. Selim Unlu | D.H. Christensen | R. Mirin
[1] J. Muszalski,et al. Resonant cavity enhanced photonic devices , 1995 .
[2] E. Ozbay,et al. 2.0 ps, 150 GHz GaAs monolithic photodiode and all-electronic sampler , 1991, IEEE Photonics Technology Letters.
[3] J.C. Campbell,et al. Resonant-cavity separate absorption, charge and multiplication avalanche photodiodes with high-speed and high gain-bandwidth product , 1998, IEEE Photonics Technology Letters.
[4] R. Mirin,et al. High bandwidth-efficiency resonant cavity enhanced Schottky photodiodes for 800-850 nm wavelength operation , 1998 .
[5] Fabrication of high-speed resonant cavity enhanced Schottky photodiodes , 1997, IEEE Photonics Technology Letters.
[6] Resonant-cavity-enhanced pin photodetector with 17 GHz bandwidth-efficiency product , 1994 .
[7] G. Y. Robinson,et al. 110-GHz GaInAs/InP double heterostructure p-i-n photodetectors , 1995 .