Facile synthesis and photoluminescence spectroscopy of 3D-triangular GaN nano prism islands.
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B. K. Gupta | Mukesh Kumar | Pawan Kumar | G. Gupta | S. K. Pasha | Avanish Pratap Singh | S. Pasha | T. C. Shibin Krishna | Govind Gupta
[1] Govind,et al. Kinetically controlled growth of gallium on stepped Si (553) surface , 2013 .
[2] Nageh K. Allam,et al. Heteroepitaxial growth of GaN/Si (111) junctions in ammonia-free atmosphere: Charge transport, optoelectronic, and photovoltaic properties , 2013 .
[3] J. M. Gray,et al. On-chip optical interconnects made with gallium nitride nanowires. , 2013, Nano letters.
[4] B. K. Gupta,et al. Probing of Ni-Encapsulated Ferromagnetic Boron Nitride Nanotubes by Time-Resolved and Steady-State Photoluminescence Spectroscopy , 2012 .
[5] Xiaoqing Xu,et al. Influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy , 2010 .
[6] Govind,et al. Growth of oxygen-induced nanoscale-pyramidal facets on Rh(210) surface , 2010 .
[7] B. K. Gupta,et al. Photoluminescence and electron paramagnetic resonance studies of springlike carbon nanofibers , 2009 .
[8] D. V. Dinh,et al. Size-dependent Field-emission Properties from Triangular-shapedGaN Nanostructures , 2009 .
[9] D. V. Dinh,et al. Synthesis and field emission properties of triangular-shaped GaN nanowires on Si(100) substrates , 2009 .
[10] Lawrence H. Robins,et al. Steady-state and time-resolved photoluminescence from relaxed and strained GaN nanowires grown by catalyst-free molecular-beam epitaxy , 2008 .
[11] Junyong Kang,et al. Self-Organization of 3D Triangular GaN Nanoislands and the Shape Variation to Hexagonal , 2007 .
[12] Michael Heuken,et al. All-optical characterization of carrier lifetimes and diffusion lengths in MOCVD-, ELO-, and HVPE- grown GaN , 2007 .
[13] C. Ning,et al. Photoluminescence of GaN nanowires of different crystallographic orientations. , 2007 .
[14] George T. Wang,et al. Highly aligned, template-free growth and characterization of vertical GaN nanowires on sapphire by metal–organic chemical vapour deposition , 2006 .
[15] K. B. Nam,et al. Deep impurity transitions involving cation vacancies and complexes in AlGaN alloys , 2005 .
[16] James S. Speck,et al. Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques , 2005 .
[17] Peter J. Pauzauskie,et al. Crystallographic alignment of high-density gallium nitride nanowire arrays , 2004, Nature materials.
[18] A. Bittar,et al. X‐ray absorption spectroscopy in the analysis of GaN thin films , 2003 .
[19] P. Yang,et al. Metalorganic Chemical Vapor Deposition Route to GaN Nanowires with Triangular Cross Sections , 2003 .
[20] M. Kuball,et al. Raman spectroscopy of GaN, AlGaN and AlN for process and growth monitoring/control , 2001 .
[21] A. Dharamsi,et al. Measurements of density fluctuations by modulation spectroscopy , 1996 .
[22] W. Shan,et al. Pressure‐dependent photoluminescence study of wurtzite GaN , 1995 .
[23] M. Tanemura,et al. Fundamental and practical aspects of reactive N+2‐ion sputtering in Auger in‐depth analysis , 1991 .