Determination of Quantum Efficiency in In$_{\bf {0.53}}$ Ga$_{\bf{0.47}}$As-InP-Based APDs

A method to precisely determine the quantum efficiency and primary photocurrent in avalanche photodiodes (APDs) is presented based on a linear relationship between excess noise factor F and gain, M. The new method is used to accurately compare performance of modern APD designs when nonlocal impact ionization effects govern the relationship between noise and gain.

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