Reflectance-difference studies of organometallic chemical-vapor-deposition growth transients on (001) GaAs

[1]  J. P. Harbison,et al.  Application of reflectance difference spectroscopy to molecular‐beam epitaxy growth of GaAs and AlAs , 1988 .

[2]  A. A. Studna,et al.  Reflectance‐difference spectroscopy system for real‐time measurements of crystal growth , 1988 .

[3]  A. A. Studna,et al.  Optical reflectance measurements of transients during molecular‐beam epitaxial growth on (001) GaAs , 1988 .

[4]  G. B. Stringfellow,et al.  Reaction mechanisms in the organometallic vapor phase epitaxial growth of GaAs , 1988 .

[5]  K. Jensen,et al.  In situ mass spectroscopy and thermogravimetric studies of GaAs MOCVD gas phase and surface reactions , 1987 .

[6]  Flórez,et al.  Optical reflectance and electron diffraction studies of molecular-beam-epitaxy growth transients on GaAs(001). , 1987, Physical review letters.

[7]  Susumu Namba,et al.  Atomic‐layer growth of GaAs by modulated‐continuous‐wave laser metal‐organic vapor‐phase epitaxy , 1987 .

[8]  I. M. Young,et al.  Real Time Observation of Periodic Step Arrays During Silicon Vapour Phase Homoepitaxy , 1987 .

[9]  I. M. Young,et al.  In-Situ Ellipsometry and Light Scattering Studies of Substrate Cleaning and Initial Layer Deposition in Low Temperature CVD of Crystalline Si , 1987 .

[10]  A. A. Studna,et al.  Optical Reflectance and Rheed Transients During Mbe Growth on (001) GaAs , 1987 .

[11]  J. Olson,et al.  In situ characterization of MOCVD growth processes by light scattering techniques , 1986 .

[12]  S. Denbaars,et al.  Homogeneous and heterogeneous thermal decomposition rates of trimethylgallium and arsine and their relevance to the growth of GaAs by MOCVD , 1986 .

[13]  R. Bhat,et al.  The growth and characterization of AlGaAs using dimethyl aluminum hydride , 1986 .

[14]  J. Butler,et al.  In situ, real-time diagnostics of OMVPE using IR-diode laser spectroscopy☆ , 1986 .

[15]  Y. Monteil,et al.  Raman investigations of reaction process in MOVPE , 1986 .

[16]  P. M. Rodgers,et al.  High performance, long wavelength opto-electronic components by atmospheric pressure MOVPE , 1986 .

[17]  D. Aspnes.  Above-bandgap optical anisotropies in cubic semiconductors: A visible-near ultraviolet probe of surfaces , 1985 .

[18]  J. Nishizawa.  Molecular layer epitaxy , 1985 .

[19]  Aspnes,et al.  Anisotropies in the above-bandgap optical spectra of cubic semiconductors. , 1985, Physical review letters.

[20]  M. Razeghi,et al.  Growth and characterization of InP using metalorganic chemical vapor deposition at reduced pressure , 1983 .

[21]  F. Hottier,et al.  In situ observation of polysilicon nucleation and growth , 1982 .

[22]  F. Hottier,et al.  Qualitative and quantitative assessments of the growth of (Al,Ga) As-GaAs heterostructures by in situ ellipsometry , 1981 .

[23]  J. Theeten,et al.  Surface analysis during vapour phase growth , 1980 .

[24]  F. Hottier,et al.  In situ monitoring by ellipsometry of metalorganic epitaxy of GaAlAs‐GaAs superlattice , 1980 .

[25]  J. Theeten,et al.  Ellipsometric assessment of (Ga, Al) As/GaAs epitaxial layers during their growth in an organometallic VPE system , 1979 .

[26]  P. D. Dapkus,et al.  Room‐temperature operation of Ga(1−x)AlxAs/GaAs double‐heterostructure lasers grown by metalorganic chemical vapor deposition , 1977 .

[27]  Harold M. Manasevit,et al.  Single-crystal gallium arsenide on insulating substrates , 1968 .