Novel near-field probe for on-wafer integrated circuit measurements
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Abstract A non-invasive technique for measuring both the electrical and topographical characteristics of high frequency circuits has been developed. The technique is based on the scanning force microscope instrument, where the instrument probe mechanism is modified to measure the charge distribution at a localized site on the circuit under test. Experimental testing of the probe's sensitivity and resolution is performed on an interconnect line. Both numerical simulation and experimental measurement yield a present resolution of 15 μm for the system.
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