Trends in ion implantation in silicon VLSI technology

A brief review is presented on the emerging difficulties of implantation in manufacturing small geometry VLSIs of the future. The importance of understanding the physical phenomena associated with the behavior of implanted ions and generated disorders is reflected in the design and fabrication of accurately controlled depth and lateral profiles of shallow and submicron size junctions. As a particular example, the complexity of implantation and mixing involved in a solid phase silicidation reaction is described. New technology fields such as MeV range high-energy implantation, finely focused beam implantation, and heavy dose oxygen or nitrogen ion implantation are also reviewed briefly. Differences between the physical processes involved in the new field of implantation and those of conventional technology are presented with a short description of machine trends in the field.