Electron‐spin‐resonance study of radiation‐induced paramagnetic defects in oxides grown on (100) silicon substrates

We have used electron‐spin resonance to investigate radiation‐induced point defects in Si/SiO2 structures with (100) silicon substrates. We find that the radiation‐induced point defects are quite similar to defects generated in Si/SiO2 structures grown on (111) silicon substrates. In both cases, an oxygen‐deficient silicon center, the E’ defect, appears to be responsible for trapped positive charge. In both cases trivalent silicon (Pb centers) defects are primarily responsible for radiation‐induced interface states. In earlier electron‐spin‐resonance studies of unirradiated (100) substrate capacitors two types of Pb centers were observed; in oxides prepared in three different ways only one of these centers, the Pb0 defect, is generated in large numbers by ionizing radiation.

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