论文信息 - Methane/hydrogen‐based reactive ion etching of InAs, InP, GaAs, and GaSb

Methane/hydrogen‐based reactive ion etching of InAs, InP, GaAs, and GaSb

Reactive ion etching (RIE) of InAs, InP, GaAs, and GaSb using CH4/H2 mixtures has been studied to determine the resulting etch profiles and surface morphologies, as well as the dependence of etch rates on cathode temperature, chamber pressure, and electrode self‐bias. These materials are found to etch slowly and controllably, with etched samples having smooth surfaces and nearly vertical sidewalls. Our results demonstrate that CH4/H2 RIE is a promising technology for fabricating electronic devices using the newly emerging InAs/GaSb/AlSb material system as well as the better established InP material system.

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