论文信息 - Screening of organotellurium compounds for use as MOVPE precursors - 字舞流文

Screening of organotellurium compounds for use as MOVPE precursors

J. E. Hails | S. Irvine

[1] J. Mullin,et al. Laser‐induced selected area epitaxy of CdTe and HgTe , 1990 .

[2] S. Ghandhi,et al. The growth and characterization of HgTe and HgCdTe using methylalylltelluride , 1990 .

[3] S. Ghandhi,et al. Low‐temperature growth of HgTe and HgCdTe using methylallyltelluride , 1989 .

[4] W. Hoke,et al. An examination of organometallic thermal stability and its relevance to low-temperature MOCVD growth of HgCdTe , 1988 .

[5] D. C. Harris,et al. Metalorganic growth of HgTe and CdTe at low temperatures using diallyltelluride , 1987 .

[6] J. Thompson,et al. The growth of CdHgTe using the interdiffused multilayer process at reduced temperatures , 1987 .

[7] W. Hoke,et al. Metalorganic growth of CdTe and HgCdTe epitaxial films at a reduced substrate temperature using diisopropyltelluride , 1985 .

[8] J. D. Parsons,et al. Temperature-independent unassisted pyrolytic MOCVD growth of cadmium telluride at 290°C and mercury telluride at 325°C using dimethylcadmium methylallyltelluride and dimethylmercury , 1988 .