Carrier Transport and Optical Properties of InGaN SQW With Embedded AlGaN-Layer

We investigate the carrier transport and optical properties of a thick InGaN single quantum well (SQW) where an AlGaN -layer is embedded. By way of simulation, it is found that the carrier density distribution in the active region is more uniform in such a QW structure, compared to a double QW (DQW) configuration showing a discontinuity in the hole quasi-Fermi level due to the large effective mass of the holes along with the strong piezoelectric field. Through the photoluminescence (PL) measurements, we have shown that the PL peak energy varies depending sensitively on the -layer thickness, providing an extra degree of freedom in the wavelength-tuning control. In particular, such a QW structure is highly desired for long-wavelength emission as the wavelength tuning can be achieved with lower indium composition. The embedded -layer also increases the wave function overlap between holes and electrons, thereby shortening the PL lifetime. The results of PL measurements are shown to be consistent with the self-consistent numerical results. A possible application of the proposed QW structure is to the design of longwavelength light-emitting diodes and laser diodes.

[1]  Joachim Piprek,et al.  Simulation and optimization of 420-nm InGaN/GaN laser diodes , 2000, Photonics West - Optoelectronic Materials and Devices.

[2]  Takashi Mukai,et al.  Blue InGaN-based laser diodes with an emission wavelength of 450 nm , 2000 .

[3]  G. W. Brown,et al.  The numerical solution of poisson's equation for two-dimensional semiconductor devices , 1976 .

[4]  Shun Lien Chuang,et al.  k.p method for strained wurtzite semiconductors , 1996 .

[5]  Fritz Henneberger,et al.  Polarization charge screening and indium surface segregation in (In,Ga)N/GaN single and multiple quantum wells , 2000 .

[6]  A. Di Carlo,et al.  Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures , 1999 .

[7]  Ming-Fu Li,et al.  Uniaxial strain effect on the electronic and optical properties of wurtzite GaN-AlGaN quantum-well lasers , 1998 .

[8]  Gye Mo Yang,et al.  Structural and optical investigation of InGaN/GaN multiple quantum well structures with various indium compositions , 2001 .

[9]  Juang,et al.  Stark shift and field-induced tunneling in AlxGa1-xAs/GaAs quantum-well structures. , 1990, Physical review. B, Condensed matter.

[10]  Shuji Nakamura.  GaN-based blue/green semiconductor laser , 1997 .

[11]  Y.-C. Hsu,et al.  Structure asymmetry effects in the optical gain of piezostrained InGaN quantum wells , 1999 .

[12]  Paul S. Martin,et al.  Illumination with solid state lighting technology , 2002 .

[13]  Yen-Kuang Kuo,et al.  Effects of electronic current overflow and inhomogeneous carrier distribution on InGaN quantum-well laser performance , 2004 .

[14]  M. Willander,et al.  III–nitrides: Growth, characterization, and properties , 2000 .

[15]  J. Im,et al.  Reduction of oscillator strength due to piezoelectric fields in G a N / A l x Ga 1 − x N quantum wells , 1998 .

[16]  Tsuyoshi Uda,et al.  A two-dimensional device simulator of semiconductor lasers , 1987 .

[17]  Keiji Sakamoto,et al.  GaN-based laser diodes emitting from ultraviolet to blue-green , 2003, SPIE OPTO.

[18]  Yen-Kuang Kuo,et al.  Simulation of blue InGaN quantum-well lasers , 2003 .

[19]  Masahiko Sano,et al.  InGaN/GaN/AlGaN-Based Laser Diodes Grown on GaN Substrates with a Fundamental Transverse Mode , 1998 .

[20]  C. Huh,et al.  Temperature dependence of performance of InGaN/GaN MQW LEDs with different indium compositions , 2004, IEEE Electron Device Letters.

[21]  C. Walle,et al.  Small valence-band offsets at GaN/InGaN heterojunctions , 1997 .

[22]  Shuji Nakamura,et al.  InGaN-based violet laser diodes , 1999 .