A novel 0.35µm 800V BCD technology platform for offline applications

Here is presented the development of the new BCD800 platform which conjugates 3.3V CMOS logic, 5/25/30V power devices and a 800V nLDMOS in a 0.35μm technology node. LV components can be placed into a floating pocket which can be referred up to 650V, furthermore this process features an innovative lateral junction isolation module obtained by a boron-doped poly-filled deep trench with great advantages in terms of performances and area saving. The process industrialization has been demonstrated and a fully functional test vehicle is available in the form of a single-chip High Voltage Smart Gate Driver for half bridges.

[1]  C. Contiero,et al.  BCD8 from 7V to 70V: a new 0.l8μm Technology Platform to Address the Evolution of Applications towards Smart Power ICs with High Logic Contents , 2007, Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's.

[2]  Benno Krabbenborg,et al.  Advanced BCD technology for automotive, audio and power applications , 2007 .

[3]  Tatsuhiko Fujihira,et al.  Self-shielding: new high-voltage inter-connection technique for HVICs , 1996, 8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings.

[4]  Z. Hossain.  Determination of Manufacturing Resurf Process Window for a Robust 700V Double Resurf LDMOS Transistor , 2008, 2008 20th International Symposium on Power Semiconductor Devices and IC's.

[5]  P. Galbiati,et al.  A novel 0.16 μm — 300 V SOIBCD for ultrasound medical applications , 2011, 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.