V.C. Venezia, C. Shih, W.Z. Yang, Y. Zang, Z. Lin, L. A. Grant, and H. Rhodes Omnivision Technologies, Santa Clara CA 95054, Tel: (408) 567-3000, Fax: (408) 567-3001, Email: vincentv@ovt.com Abstract In this work, Omnivision’s second-generation (Gen2), 1.0um CMOS image-sensor technology is presented. The key features of this Gen2 technology are hybrid-bond (HB) stacking, backside deep trench isolation (BS-DTI), a new backside composite metal-oxide grid (CMG), and improved gate oxide quality. The Gen2, 1.0-um pixel products achieve 20% higher full well capacitance, 12.5% higher sensitivity, 10-lux lower SNR10, 2x lower RTS noise and a 10% reduction in chip size. Results are demonstration on 16and 20-MP array products.