论文信息 - Properties of MIS structures based on graded-gap HgCdTe grown by molecular beam epitaxy - 字舞流文

Properties of MIS structures based on graded-gap HgCdTe grown by molecular beam epitaxy

V. Vasiliev | A. Voitsekhovskii | S. Dvoretskii | Yu. G. Sidorov | V. Varavin | N. Mikhaĭlov | S. N. Nesmelov | S. M. Dzyadookh