SPICE Simulation for Analysis and Design of Fast 1 . 55 m MQW Laser Diodes

A rate equation model for static and dynamic behavior of 1.55 m InGaAsP multiquantum-well (MQW) semiconductor lasers has been developed. A three level scheme for the rate equations has been chosen in order to model carrier transport effects. The introduction of quasi-two-dimensional (quasi-2-D) gateway states between unbound and confined states has been used to calculate, for each well independently, carrier density and gain, allowing to take nonuniform injection into account. Starting from the formal identity between a rate equation and a Kirchoff current balance equation at a capacitor node, the model has been implemented on a SPICE circuit emulator. SPICE has granted an easy handling of parasitics and opens the possibility of integration with electrical components. The model’s parameters have been directly derived from a complete set of measurements on real devices. Thanks to this characterization and the model accuracy, we have obtained good agreement between simulations and experimental data. The model was finally used to improve both static and dynamic properties of MQW devices. Based on this optimization, compressive strained InGaAsP/InP MQW Fabry–Perot lasers were realized, achieving low threshold current, high efficiency, and more than 10 GHz of direct modulation bandwidth.

[1]  R.S. Tucker,et al.  Microwave Circuit Models of Semiconductor Injection Lasers , 1982, 1982 IEEE MTT-S International Microwave Symposium Digest.

[2]  G. Eisenstein,et al.  Transient carrier dynamics and photon-assisted transport in multiple-quantum-well lasers , 1993, IEEE Photonics Technology Letters.

[3]  Masayuki Ishikawa,et al.  High speed quantum-well lasers and carrier transport effects , 1992 .

[4]  R. Olshansky,et al.  Measurement of radiative and nonradiative recombination rates in InGaAsP and AlGaAs light sources , 1984 .

[5]  R. Paoletti,et al.  High frequency modeling and characterization of high performance DFB laser modules , 1994 .

[6]  Gadi Eisenstein,et al.  Distributed nature of quantum-well lasers , 1993 .

[7]  M. Meliga,et al.  MOCVD regrowth of semi-insulating InP and p-n junction blocking layers around laser active stripes , 1997 .

[8]  R. O'Dowd,et al.  Comparison of two- and three-level rate equations in the modeling of quantum-well lasers , 1995 .

[9]  T. Tanbun-Ek,et al.  Gain characteristics of 1.55-μm high-speed multiple-quantum-well lasers , 1995, IEEE Photonics Technology Letters.

[10]  M. Asada,et al.  Carrier capture time and its effect on the efficiency of quantum-well lasers , 1994 .

[11]  Masayuki Ishikawa,et al.  Transport limits in high-speed quantum well lasers , 1992 .

[12]  Nir Tessler,et al.  On carrier injection and gain dynamics in quantum well lasers , 1993 .

[13]  R. M. Spencer,et al.  Nonlinear gain coefficients in semiconductor quantum-well lasers: effects of carrier diffusion, capture, and escape , 1995 .

[14]  Yasuharu Suematsu,et al.  Handbook of semiconductor lasers and photonic integrated circuits , 1994 .

[15]  Wood-Hi Cheng,et al.  Wide-band modulation of 1.3 mu m InGaAsP buried crescent lasers with iron- and cobalt-doped semi-insulating current blocking layers , 1989 .

[16]  B. W. Hakki,et al.  cw degradation at 300°K of GaAs double-heterostructure junction lasers. II. Electronic gain , 1973 .

[17]  I. Montrosset,et al.  Optical modulation technique for carrier lifetime measurement in semiconductor lasers , 1996, IEEE Photonics Technology Letters.

[18]  T. Detemple,et al.  On the semiconductor laser logarithmic gain-current density relation , 1993 .

[19]  Roberto Paoletti,et al.  Comparison of optical and electrical modulation bandwidths in three different 1.55-μm InGaAsP buried laser structures , 1996, Photonics West.

[20]  R. Nagarajan,et al.  Transport limits in high-speed quantum-well lasers: experiment and theory , 1992, IEEE Photonics Technology Letters.