论文信息 - Numerical analysis of the gate voltage dependence of the series resistances and effective channel length in submicrometer GaAs MESFETs

Numerical analysis of the gate voltage dependence of the series resistances and effective channel length in submicrometer GaAs MESFETs

A detailed numerical analysis of the source and drain parasitic resistances and effective channel length of state-of-the-art GaAs MESFETs is presented. Two-dimensional simulations are used to evaluate different criteria (physical and electrical) for defining the device parameters of interest, as well as to study their gate voltage dependence. To this purpose a novel criterion which provides a simple procedure to determine the series resistances as a function of gate bias is proposed. >

Roberto Menozzi | Luca Selmi | Bruno Ricco | P. Gandolfi

[1] A. Peczalski,et al. Gate-voltage dependence of source and drain series resistances and effective gate length in GaAs MESFETs , 1988 .

[2] R. F. Motta,et al. A new method to determine MOSFET channel length , 1980, IEEE Electron Device Letters.

[3] Timothy A. Grotjohn,et al. Source and drain resistance studies of short-channel MESFETs using two-dimensional device simulators , 1990 .

[4] L. Yang,et al. New method to measure the source and drain resistance of the GaAs MESFET , 1986, IEEE Electron Device Letters.

[5] W. Bloss,et al. A gate probe method of determining parasitic resistance in MESFET's , 1986, IEEE Electron Device Letters.

[6] K.W. Lee,et al. A new interpretation of "End" resistance measurements , 1984, IEEE Electron Device Letters.

[7] F.-C. Hsu,et al. Source-and-drain series resistance of LDD MOSFET's , 1984, IEEE Electron Device Letters.

[8] S. Chaudhuri,et al. On the determination of source and drain series resistances of MESFET's , 1984, IEEE Electron Device Letters.

[9] H. Fukui,et al. Determination of the basic device parameters of a GaAs MESFET , 1979, The Bell System Technical Journal.

[10] Michael S. Shur,et al. Source, drain, and gate series resistances and electron saturation velocity in ion-implanted GaAs FET's , 1985 .