GaAs Bipolar Digital Integrated Circuits

Publisher Summary This chapter reviews the rapid progress of molecular beam epitaxy (MBE). It discusses the general properties of GaAs bipolar transistors as applied to integrated circuit (IC) design. The chapter highlights the development of a heterojunction bipolar 1 K gate array at the Central Research Laboratories of Texas Instruments. Although GaAs bipolar integrated circuits in I 2 L-like and ECL configurations have been demonstrated in recent years, the activities have been limited to a small number of researchers who had access to a molecular beam epitaxy facility. The investigations have been largely guided by experimental procedures in which it must be learnt to adjust the process steps to minimize the expected or unexpected changes in material properties prepared by the MBE technique. The progress made so far in this area, developing not only discrete heterojunction bipolar transistors but also integrated circuits, is impressive. As the MBE material preparation technique becomes more mature and widespread, there is no doubt that the activities in GaAs bipolar integrated circuits will accelerate.

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