论文信息 - Reduction of structural defects in a-plane GaN epitaxy by use of periodic hemispherical patterns in r-plane sapphire substrates - 字舞流文

Reduction of structural defects in a-plane GaN epitaxy by use of periodic hemispherical patterns in r-plane sapphire substrates

K. Sun | F. Ponce | A. Fischer | Ti Li | J. Dai | Changqin Chen | Z. H. Wu | Q. Wei | Y. Fang | J. Yin | Y. Sun