Effect of Annealing Ferroelectric HfO2 Thin Films: In Situ, High Temperature X‐Ray Diffraction
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Christoph Adelmann | Thomas Mikolajick | Jacob L. Jones | Uwe Schroeder | Karl Opsomer | Christophe Detavernier | Claudia Richter | Min Hyuk Park | K. Opsomer | C. Detavernier | C. Adelmann | T. Mikolajick | U. Schroeder | C. Chung | M. Park | T. Schenk | C. Richter | Ching-Chang Chung | Tony Schenk
[1] R. D. Shannon. Revised effective ionic radii and systematic studies of interatomic distances in halides and chalcogenides , 1976 .
[2] Wataru Utsumi,et al. Phase relations and equations of state of ZrO 2 under high temperature and high pressure , 2001 .
[3] Lothar Frey,et al. Ferroelectricity in yttrium-doped hafnium oxide , 2011 .
[4] Jacob L. Jones,et al. Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material. , 2018, Inorganic chemistry.
[5] C. Hwang,et al. Two-step polarization switching mediated by a nonpolar intermediate phase in Hf0.4Zr0.6O2 thin films. , 2016, Nanoscale.
[6] Martin L. Green,et al. Nucleation of atomic-layer-deposited HfO2 films, and evolution of their microstructure, studied by grazing incidence small angle x-ray scattering using synchrotron radiation , 2006 .
[7] C. Hwang,et al. First-principles study on doping and phase stability of HfO2 , 2008 .
[8] Thomas Mikolajick,et al. Optimizing process conditions for improved Hf1xZrxO2 ferroelectric capacitor performance , 2017 .
[9] T. Mikolajick,et al. Ten-Nanometer Ferroelectric $\hbox{Si:HfO}_{2}$ Films for Next-Generation FRAM Capacitors , 2012, IEEE Electron Device Letters.
[10] Sergei V. Kalinin,et al. Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories , 2013, 2013 IEEE International Electron Devices Meeting.
[11] C. Hwang,et al. Effect of the annealing temperature of thin Hf0.3Zr0.7O2 films on their energy storage behavior , 2014 .
[12] Uwe Schroeder,et al. Effect of Zr Content on the Wake-Up Effect in Hf1-xZrxO2 Films. , 2016, ACS applied materials & interfaces.
[13] Evgeni P. Gusev,et al. Ultrathin HfO 2 films grown on Silicon by atomic layer deposition for advanced gate dielectrics applications , 2003 .
[14] R. Batra,et al. Stabilization of metastable phases in hafnia owing to surface energy effects , 2016 .
[15] Thomas Mikolajick,et al. Ferroelectricity and Antiferroelectricity of Doped Thin HfO2‐Based Films , 2015, Advanced materials.
[16] C. Hwang,et al. Ferroelectricity in undoped-HfO2 thin films induced by deposition temperature control during atomic layer deposition , 2016 .
[17] Stefan Slesazeck,et al. Physical Mechanisms behind the Field‐Cycling Behavior of HfO2‐Based Ferroelectric Capacitors , 2016 .
[18] H. Funakubo,et al. Impact of mechanical stress on ferroelectricity in (Hf0.5Zr0.5)O2 thin films , 2016 .
[19] C. Hwang,et al. Understanding the formation of the metastable ferroelectric phase in hafnia-zirconia solid solution thin films. , 2018, Nanoscale.
[20] C. Hwang,et al. A study on the wake-up effect of ferroelectric Hf0.5Zr0.5O2 films by pulse-switching measurement. , 2016, Nanoscale.
[21] A. Demkov,et al. Monoclinic to tetragonal transformations in hafnia and zirconia: A combined calorimetric and density functional study , 2009 .
[22] H. Funakubo,et al. Growth of epitaxial orthorhombic YO1.5-substituted HfO2 thin film , 2015 .
[23] T. Mikolajick,et al. Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films , 2013 .
[24] Jacob L. Jones,et al. Factors Favoring Ferroelectricity in Hafnia: A First-Principles Computational Study , 2017 .
[25] Chang-Beom Eom,et al. Strain Tuning of Ferroelectric Thin Films , 2007 .
[26] Jacob L. Jones,et al. Si Doped Hafnium Oxide—A “Fragile” Ferroelectric System , 2017 .
[27] T. Kikegawa,et al. Phase Relations and Volume Changes of Hafnia under High Pressure and High Temperature , 2004 .
[28] Jacob L. Jones,et al. A comprehensive study on the structural evolution of HfO2 thin films doped with various dopants , 2017 .
[29] U. Böttger,et al. Ferroelectricity in hafnium oxide thin films , 2011 .
[30] C. Hwang,et al. Toward a multifunctional monolithic device based on pyroelectricity and the electrocaloric effect of thin antiferroelectric HfxZr1−xO2 films , 2015 .
[31] Christoph Adelmann,et al. Strontium doped hafnium oxide thin films: Wide process window for ferroelectric memories , 2013, 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC).
[32] C. Hwang,et al. Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment. , 2017, Nanoscale.
[33] A. Tagantsev,et al. Room-temperature ferroelectricity in strained SrTiO3 , 2004, Nature.
[34] T. Mikolajick,et al. Effect of acceptor doping on phase transitions of HfO2 thin films for energy-related applications , 2017 .
[35] Michael J. Hoffmann,et al. Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO2 , 2016 .
[36] Osami Sakata,et al. The demonstration of significant ferroelectricity in epitaxial Y-doped HfO2 film , 2016, Scientific Reports.
[37] Joshua H. Carpenter,et al. Flexible Inorganic Ferroelectric Thin Films for Nonvolatile Memory Devices , 2017 .
[38] W. Kriven,et al. Thermal expansion of HfO 2 and ZrO 2 , 2014 .
[39] Patrick Polakowski,et al. Ferroelectricity in undoped hafnium oxide , 2015 .
[40] Tomonori Nishimura,et al. Ferroelectric phase stabilization of HfO2 by nitrogen doping , 2016 .
[41] Thomas Mikolajick,et al. Nonvolatile Random Access Memory and Energy Storage Based on Antiferroelectric Like Hysteresis in ZrO2 , 2016 .
[42] Cheol Seong Hwang,et al. Scale-up and optimization of HfO2-ZrO2 solid solution thin films for the electrostatic supercapacitors , 2017 .
[43] Jacob L. Jones,et al. Origin of Temperature‐Dependent Ferroelectricity in Si‐Doped HfO2 , 2018 .
[44] C. Hwang,et al. Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature , 2013 .
[45] M. Caymax,et al. Characterisation of ALCVD Al2O3–ZrO2 nanolaminates, link between electrical and structural properties , 2002 .
[46] Uwe Schroeder,et al. On the structural origins of ferroelectricity in HfO2 thin films , 2015 .
[47] Jacob L. Jones,et al. Crystal structure of Si-doped HfO2 , 2014 .
[48] Michael J. Hoffmann,et al. Ferroelectric phase transitions in nanoscale HfO2 films enable giant pyroelectric energy conversion and highly efficient supercapacitors , 2015 .
[49] Jacob L. Jones. The effect of crystal symmetry on the maximum polarization of polycrystalline ferroelectric materials , 2010 .
[50] S. Hyun,et al. Giant Negative Electrocaloric Effects of Hf0.5Zr0.5O2 Thin Films , 2016, Advanced materials.
[51] Mark A. Rodriguez,et al. Pyroelectric response in crystalline hafnium zirconium oxide (Hf1-xZrxO2) thin films , 2017 .
[52] Saeed Moghaddam,et al. TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films , 2015 .
[53] Christoph Adelmann,et al. Impact of different dopants on the switching properties of ferroelectric hafniumoxide , 2014 .
[54] R. Arróyave,et al. Real-time atomistic observation of structural phase transformations in individual hafnia nanorods , 2017, Nature Communications.
[55] Christoph Adelmann,et al. Stabilizing the ferroelectric phase in doped hafnium oxide , 2015 .
[56] Lothar Frey,et al. Ferroelectricity in Simple Binary ZrO2 and HfO2. , 2012, Nano letters.
[57] Alfred Kersch,et al. The Origin of Ferroelectricity in Hf$_{x}$ Zr$_{1-x}$ O$_2$: A Computational Investigation and a Surface Energy Model , 2015 .
[58] Theodor Doll,et al. Tuning the dielectric properties of hafnium silicate films , 2007 .
[59] Jacob L. Jones,et al. Doped Hf0.5Zr0.5O2 for high efficiency integrated supercapacitors , 2017 .
[60] Jr.,et al. Dopants Promoting Ferroelectricity in Hafnia: Insights from a comprehensive Chemical Space Exploration , 2017, 1707.04211.