Optically pumped midinfrared (λ = 3.6 μm) light-emitting diodes based on indium arsenide with photonic crystals

It is established that a periodic relief (photonic crystal) created on the surface of an indium arsenide crystal influences the reflection coefficient and the intensity of mid-IR radiation with λ = 3.3–3.6 μm emitted from the active region of an optically pumped InAs-based light-emitting diode.