High-Performance$hboxSrTiO_3$MIM Capacitors for Analog Applications

TaN/SrTiO<sub>3</sub>/TaN capacitors with a capacitance density of 28-35 fF/mum<sup>2</sup> have been developed by using a high-kappa (kappa=147-169) SrTiO<sub>3</sub> dielectric containing nanometer-sized microcrystals (3-10 nm). A small capacitance effective thickness was achieved by reducing the interfacial TaON using N<sup>+ </sup> treatment on the lower TaN electrode during post-deposition annealing. The small (92 ppm/V<sup>2</sup>) voltage coefficient of the capacitance and the 3times10<sup>-8</sup> A/cm<sup>2</sup> leakage current at 2 V exceed the International Technology Roadmap for Semiconductors' requirements for analog capacitors at year 2018

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