New physics-based analytic approach to the thin-oxide breakdown statistics
暂无分享,去创建一个
J. Sune | J. Suñé | Jordi Suñé
[1] J. Stathis. Percolation models for gate oxide breakdown , 1999 .
[2] Jordi Suñé,et al. Characterization of SiO/sub 2/ dielectric breakdown for reliability simulation , 1993 .
[3] Jordi Suñé,et al. On the breakdown statistics of very thin SiO2 films , 1990 .
[4] R. Degraeve,et al. The influence of elevated temperature on degradation and lifetime prediction of thin silicon-dioxide films , 2000 .
[5] Salvatore Lombardo,et al. Degradation and hard breakdown transient of thin gate oxides in metal–SiO2–Si capacitors: Dependence on oxide thickness , 1999 .
[6] Ernest Y. Wu,et al. Challenges for accurate reliability projections in the ultra-thin oxide regime , 1999, 1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296).
[7] R. S. Scott,et al. A model relating wearout to breakdown in thin oxides , 1994 .
[8] A. Ghetti,et al. An anode hole injection percolation model for oxide breakdown-the "doom's day" scenario revisited , 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).
[9] M. Alam,et al. The statistical distribution of percolation resistance as a probe into the mechanics of ultra-thin oxide breakdown , 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).
[10] J. Stathis,et al. Ultra-thin oxide reliability for ULSI applications , 2000 .
[11] Guido Groeseneken,et al. A consistent model for the thickness dependence of intrinsic breakdown in ultra-thin oxides , 1995, Proceedings of International Electron Devices Meeting.
[12] Mong-Song Liang,et al. Cell-based analytic statistical model with correlated parameters for intrinsic breakdown of ultrathin oxides , 1999 .