Concentrator multijunction solar cell characteristics under variable intensity and temperature
暂无分享,去创建一个
P. Hebert | Geoffrey S. Kinsey | R. A. Sherif | H. L. Cotal | Dmitri D. Krut | G. Kinsey | R. Sherif | P. Hebert | H. Cotal | D. Krut | Kent E. Barbour | Kent E. Barbour
[1] Martin A. Green,et al. Reduced temperature coefficients for recent high‐performance silicon solar cells , 1994 .
[2] P. Bhattacharya,et al. Semiconductor Optoelectronic Devices , 1993 .
[3] D. Law,et al. 40% efficient metamorphic GaInP∕GaInAs∕Ge multijunction solar cells , 2007 .
[4] M. Burgelman,et al. Temperature dependence of the diode ideality factor in CuInS2-on-Cu-tape solar cells , 2005 .
[5] Y. P. Varshni. Temperature dependence of the energy gap in semiconductors , 1967 .
[6] Sewang Yoon,et al. Reduced temperature dependence of high-concentration photovoltaic solar cell open-circuit voltage (Voc) at high concentration levels , 1994, Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC).
[7] Yukiharu Uraoka,et al. Evaluation of temperature characteristics of high-efficiency InGaP/InGaAs/Ge triple-junction solar cells under concentration , 2005 .
[8] John C. C. Fan,et al. Theoretical temperature dependence of solar cell parameters , 1986 .
[9] T. Fuyuki,et al. Annual output estimation of concentrator photovoltaic systems using high-efficiency InGaP/InGaAs/Ge triple-junction solar cells based on experimental solar cell's characteristics and field-test meteorological data , 2006 .
[10] R. Sherif,et al. Temperature Dependence of the IV Parameters from Triple Junction GaInP/InGaAs/Ge Concentrator Solar Cells , 2006, 2006 IEEE 4th World Conference on Photovoltaic Energy Conference.
[11] Daniel J. Friedman. Modelling of tandem cell temperature coefficients , 1996, Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996.
[12] S. Dimitrijev. Principles of semiconductor devices , 2005 .
[13] V. Swaminathan,et al. Materials aspects of GaAs and InP based structures , 1991 .