Tunnel field-effect transistors based on InP-GaAs heterostructure nanowires.

We present tunneling field-effect transistors fabricated from InP-GaAs heterostructure nanowires with an n-i-p doping profile, where the intrinsic InP region is modulated by a top gate. The devices show an inverse subthreshold slope down to 50 mV/dec averaged over two decades with an on/off current ratio of approximately 10(7) for a gate voltage swing (V(GS)) of 1 V and an on-current of 2.2 μA/μm. Low-temperature measurements suggest a mechanism of trap-assisted tunneling, possibly explained by a narrow band gap segment of InGaAsP.

[1]  Mats-Erik Pistol,et al.  InAs/GaSb heterostructure nanowires for tunnel field-effect transistors. , 2010, Nano letters.

[2]  David Blaauw,et al.  Low power circuit design based on heterojunction tunneling transistors (HETTs) , 2009, ISLPED.

[3]  L.-E. Wernersson,et al.  Vertical Enhancement-Mode InAs Nanowire Field-Effect Transistor With 50-nm Wrap Gate , 2008, IEEE Electron Device Letters.

[4]  B. McCombe,et al.  Subband spectroscopy by surface channel tunneling , 1978 .

[5]  Walter Riess,et al.  Silicon nanowire tunneling field-effect transistors , 2008 .

[6]  L. Wernersson,et al.  High current density Esaki tunnel diodes based on GaSb-InAsSb heterostructure nanowires. , 2011, Nano letters.

[7]  C. Thelander,et al.  Gate-induced fermi level tuning in InP nanowires at efficiency close to the thermal limit. , 2011, Nano letters.

[8]  Heike Riel,et al.  Si-InAs heterojunction Esaki tunnel diodes with high current densities , 2010 .

[9]  Roger K. Lake,et al.  Effects of band-tails on the subthreshold characteristics of nanowire band-to-band tunneling transistors , 2011 .

[10]  K. Maex,et al.  Complementary Silicon-Based Heterostructure Tunnel-FETs With High Tunnel Rates , 2008, IEEE Electron Device Letters.

[11]  T. Baba.  Proposal for Surface Tunnel Transistors , 1992 .

[12]  J. Appenzeller,et al.  Band-to-band tunneling in carbon nanotube field-effect transistors. , 2004, Physical review letters.

[13]  G. Snider,et al.  A self‐consistent solution of Schrödinger–Poisson equations using a nonuniform mesh , 1990 .

[14]  Zhixian Chen,et al.  Vertical Si-Nanowire $n$-Type Tunneling FETs With Low Subthreshold Swing ($\leq \hbox{50}\ \hbox{mV/decade}$ ) at Room Temperature , 2011, IEEE Electron Device Letters.

[15]  M. Ek,et al.  In situ etching for total control over axial and radial nanowire growth , 2010 .

[16]  H. Grubin.  The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.

[17]  Kaustav Banerjee,et al.  Vertical Si-Nanowire n-Type Tunneling FETs With Low Subthreshold Swing (≤ 50 mV/decade) at Room Temperature , 2011 .

[18]  Adrian M. Ionescu,et al.  Tunnel field-effect transistors as energy-efficient electronic switches , 2011, Nature.

[19]  Jacques I. Pankove,et al.  Optical Processes in Semiconductors , 1971 .

[20]  J. Wallentin,et al.  High-performance single nanowire tunnel diodes. , 2010, Nano letters.

[21]  Suman Datta,et al.  Temperature-Dependent $I$ – $V$ Characteristics of a Vertical $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ , 2010 .

[22]  J. Knoch,et al.  Modeling of High-Performance p-Type III–V Heterojunction Tunnel FETs , 2010, IEEE Electron Device Letters.

[23]  B. Tuck.  Conduction band density of states in impure GaAs , 1967 .

[24]  Suman Datta,et al.  Temperature-Dependent $I$– $V$ Characteristics of a Vertical $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$, 2010, IEEE Electron Device Letters.

[25]  Byung-Gook Park,et al.  Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec , 2007, IEEE Electron Device Letters.

[26]  Sorin Cristoloveanu,et al.  Tunneling field-effect transistor with epitaxial junction in thin germanium-on-insulator , 2009 .

[27]  W. Prost,et al.  Controllable p-type doping of GaAs nanowires during vapor-liquid-solid growth , 2009 .

[28]  Suman Datta,et al.  Fabrication and characterization of axially doped silicon nanowire tunnel field-effect transistors. , 2010, Nano letters.

[29]  L. Samuelson,et al.  Size-selected gold nanoparticles by aerosol technology , 1999 .

[30]  J. T. Smith,et al.  Silicon Nanowire Tunneling Field-Effect Transistor Arrays: Improving Subthreshold Performance Using Excimer Laser Annealing , 2011, IEEE Transactions on Electron Devices.

[31]  V. Zwiller,et al.  Single quantum dot nanowire LEDs. , 2007, Nano letters.

[32]  R. Rooyackers,et al.  Performance Enhancement in Multi Gate Tunneling Field Effect Transistors by Scaling the Fin-Width , 2010 .