Some experimental techniques for characterizing photoresists

Good experimental data is essential for the development of accurate and realistic models that describe resist behavior. In this paper, we give details of experimental procedures that can be used to collect data for resist modeling, and describe sources of error inherent to the various experimental methods. The need to acquire data in real time, from spun- cast films on wafers, is emphasized. The paper is illustrated with examples from our work in characterizing and modeling positive and negative deep-UV resists and silylation resists.