A Microwave Phase and Gain Controller with Segmented-Dual-Gate MESFETs in GaAs MMICs

A novel segmented-dual-gate MESFET device which provides precise gain control over broad microwave bandwidth by using prescribed gate-width-ratio is presented. The digitally-controlled precision microwave gain scaler has potential application as an ultra-wide band microwave attenuator or active microwave phase shifter. The design and test results of GaAs MMIC active attenuator and hybrid phase shifter are described.