Low-energy plasma-enhanced chemical vapor deposition for strained Si and Ge heterostructures and devices
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Giovanni Isella | Daniel Chrastina | Thomas Hackbarth | Ulf Konig | H. von Känel | U. Konig | T. Hackbarth | H. Känel | D. Chrastina | G. Isella | H.-J. Herzog | H. Herzog | B. Rössner | B. Rössner
[1] E. Müller,et al. Low energy plasma enhanced chemical vapor deposition , 2002 .
[2] U. Konig,et al. Reduced self-heating in Si/SiGe field-effect transistors on thin virtual substrates prepared by low-energy plasma-enhanced chemical vapor deposition , 2003 .
[3] Paul Crozat,et al. DC and high frequency performance of 0.1 µm n-type Si/Si0.6Ge0.4 MODFET with fMAX=188 GHz at 300K and fMAX=230 GHz at 50K , 2003 .
[4] Coleridge Pt,et al. Small-angle scattering in two-dimensional electron gases. , 1991 .
[5] E. Fitzgerald,et al. Alternatives to thick MBE-grown relaxed SiGe buffers , 2000 .
[6] K. Ismail. Effect of dislocations in strained Si/SiGe on electron mobility , 1996 .
[7] V. Venkataraman,et al. High room-temperature hole mobility in Ge0.7Si0.3/Ge/Ge0.7Si0.3 modulation-doped heterostructures , 2001 .
[8] D. Chrastina,et al. Application of Bryan's algorithm to the mobility spectrum analysis of semiconductor devices , 2003 .
[9] I. Kallfass,et al. 32 GHz MMIC distributed amplifier based on n-channel SiGe MODFETs , 2003 .
[10] Xie,et al. Semiconductor surface roughness: Dependence on sign and magnitude of bulk strain. , 1994, Physical review letters.
[11] Fletcher,et al. Low-field transport coefficients in GaAs/Ga1-xAlxAs heterostructures. , 1989, Physical review. B, Condensed matter.
[12] On the low-temperature mobility of holes in gated oxide Si/SiGe heterostructures , 1997 .
[13] E. Müller,et al. High quality SiGe electronic material grown by low energy plasma enhanced chemical vapour deposition , 2004 .
[14] D. Antoniadis,et al. Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal-oxide-semiconductor field-effect transistors , 2002 .
[15] E. Fitzgerald,et al. Very high mobility two‐dimensional hole gas in Si/GexSi1−x/Ge structures grown by molecular beam epitaxy , 1993 .
[16] Alex Dommann,et al. A plasma process for ultrafast deposition of SiGe graded buffer layers , 2000 .
[17] E. Müller,et al. Very high hole mobilities in modulation-doped Ge quantum wells grown by low-energy plasma enhanced chemical vapor deposition , 2002 .
[18] Foreman. Analytic model for the valence-band structure of a strained quantum well. , 1994, Physical review. B, Condensed matter.
[19] Bernard S. Meyerson,et al. Extremely high electron mobility in Si/SiGe modulation‐doped heterostructures , 1995 .
[20] Friedrich Schäffler,et al. High-mobility Si and Ge structures , 1997 .
[21] H. Känel,et al. Effective mass in remotely doped Ge quantum wells , 2003 .
[22] Strain relaxation and surface morphology of compositionally graded Si/Si1−xGex buffers , 1998 .
[23] Alex Dommann,et al. Silicon epitaxy by low-energy plasma enhanced chemical vapor deposition , 1998 .
[24] Jurgen Michel,et al. Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substrates , 1991 .
[25] H. Schumacher,et al. A SiGe HEMT Mixer IC with Low Conversion Loss , 2003, 2003 33rd European Microwave Conference, 2003.
[26] S. Mantl,et al. High frequency n-type MODFETs on ultra-thin virtual SiGe substrates , 2003 .
[27] K. Jenkins,et al. Measurement of the effect of self-heating in strained-silicon MOSFETs , 2002, IEEE Electron Device Letters.