论文信息 - Advanced high-K gate dielectric for high-performance short-channel In0.7Ga0.3As quantum well field effect transistors on silicon substrate for low power logic applications

Advanced high-K gate dielectric for high-performance short-channel In0.7Ga0.3As quantum well field effect transistors on silicon substrate for low power logic applications

This paper describes integration of an advanced composite high-K gate stack (4nm TaSiO<inf>x</inf>-2nm InP) in the In<inf>0.7</inf>Ga<inf>0.3</inf>As quantum-well field effect transistor (QWFET) on silicon substrate. The composite high-K gate stack enables both (i) thin electrical oxide thickness (t<inf>OXE</inf>) and low gate leakage (J<inf>G</inf>) and (ii) effective carrier confinement and high effective carrier velocity (V<inf>eff</inf>) in the QW channel. The L<inf>G</inf>=75nm In<inf>0.7</inf>Ga<inf>0.3</inf>As QWFET on Si with this composite high-K gate stack achieves high transconductance of 1750µS/µm and high drive current of 0.49mA/µm at V<inf>DS</inf>=0.5V.

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