论文信息 - Low-voltage amplifier with improved linearity using triode region MOSFET

Low-voltage amplifier with improved linearity using triode region MOSFET

This paper proposes a voltage amplifier based on MOS current follower. It has a simple structure and depends on device matching instead of specific non-linear characteristics of active devices, and has greatly improved performance in terms of linearity, voltage signal dynamic range, and minimum supply voltage. Simulation results show that HD2 of 1 Vp-p output voltage is about -50 dB at 1.8 V supply voltage and 90 μA static current.

Hiroki Sato | Shigetaka Takagi

[1] K. Bult,et al. A class of analog CMOS circuits based on the square-law characteristic of an MOS transistor in saturation , 1987 .

[2] Z. Czarnul. Novel MOS resistive circuit for synthesis of fully integrated continuous-time filters , 1986 .

[3] T. Ndjountche. Linear voltage-controlled-impedance architecture , 1996 .

[4] B. Calvo,et al. MOS resistor modelling for linearity simulation and applications , 2005, Conference on Electron Devices, 2005 Spanish.

[5] Franziska Hoffmann,et al. Design Of Analog Cmos Integrated Circuits , 2016 .

[6] Behzad Razavi,et al. Design of Analog CMOS Integrated Circuits , 1999 .

[7] Robert G. Meyer,et al. Analysis and Design of Analog Integrated Circuits , 1993 .

[8] G. Geelen,et al. An inherently linear and compact MOST-only current division technique , 1992 .

[9] Y. Tsividis. Operation and modeling of the MOS transistor , 1987 .

[10] A. Carlosena,et al. The most resistive model for the MOS resistive circuit , 1998, ISCAS '98. Proceedings of the 1998 IEEE International Symposium on Circuits and Systems (Cat. No.98CH36187).